smp3v3 thru smp36a www.vishay.com vishay general semiconductor revision: 11-dec-12 1 document number: 88481 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 surface mount t rans z orb ? transient voltage suppressors typical applications use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ics, mosfet, signal lines of sensor units for consumer, computer, industrial, and telecommunication. features ? very low profile - typical height of 1.0 mm ? ideal for automated placement ? available in uni-directional ? 400 w peak pulse power capability with a 10/1000 s waveform ? excellent clamping capability ? very fast response time ? low incremental surge resistance ? meets msl level 1, per j-st d-020, lf maximum peak of 260 c ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 mechanical data case: do-220aa (smp) molding compound meets ul 94 v-0 flammability rating base p/n-m3 - halogen-free, rohs compliant, and commercial grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 m3 suffix meets jesd 2 01 class 1a whisker test polarity: color band denotes cathode end notes (1) non-repetitive current pulse, per fig. 3 and derated above t a = 25 c per fig. 2 (2) mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal (3) pulse test: 300 s pulse width, 1 % duty cycle primary characteristics v br uni-directional 4.10 v to 44.2 v v wm 3.3 v to 36 v p ppm 400 w i fsm 40 a t j max. 150 c polarity uni-directional package do-220aa (smp) do-220aa ( s mp) e s mp ? s eries maximum ratings (t a = 25 c unless otherwise noted) parameter symbol value unit peak pulse power dissipa tion with a 10/1000 s waveform (fig. 1) (1)(2) p ppm 400 w peak pulse current with a 10/1000 s waveform (1) i ppm see table next page a peak forward surge current 10 ms single half sine-wave (2) i fsm 40 a maximum instantaneous forward voltage at 25 a (3) v f 2.5 v operating junction and st orage temperature range t j , t stg - 55 to + 150 c
smp3v3 thru smp36a www.vishay.com vishay general semiconductor revision: 11-dec-12 2 document number: 88481 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes (1) v br measured after i t applied for 300 s, i t = square wave pulse or equivalent (2) surge current waveform per fi g. 3 and derate per fig. 2 (3) all terms and symbols are cons istent with ansi/ieee c62.35 notes (1) mounted on pcb with 5.0 mm x 5.0 mm copper pad areas attached to each terminal (2) mounted on minimum r ecommended pad layout electrical characteristics (t a = 25 c unless otherwise noted) device type device marking code breakdown voltage v br at i t (1) (v) test current i t (ma) stand-off voltage v wm (v) maximum reverse leakage at v wm i d (a) (3) maximum peak pulse surge current i ppm (a) (2) maximum clamping voltage at i ppm v c (v) min. max. smp3v3 ac 4.10 5.10 1.0 3.3 200 54.8 7.3 smp5.0a ae 6.40 7.07 10 5.0 150 43.5 9.2 smp6.0a ag 6.67 7.37 10 6.0 600 38.8 10.3 smp6.5a ak 7.22 7.98 10 6.5 100 35.7 11.2 smp7.0a am 7.78 8.60 10 7.0 50 33.3 12.0 smp7.5a an 8.33 9.21 1.0 7.5 50 31.0 12.9 smp8.0a ar 8.89 9.83 1.0 8.0 20 29.4 13.6 smp11a az 12.2 13.5 1.0 11 1.0 22.0 18.2 smp12a be 13.3 14.7 1.0 12 1.0 20.1 19.9 smp13a bg 14.4 15.9 1.0 13 1.0 18.6 21.5 smp14a bk 15.6 17.2 1.0 14 1.0 17.2 23.2 smp15a bm 16.7 18.5 1.0 15 1.0 16.4 24.4 smp16a bp 17.8 19.7 1.0 16 1.0 15.4 26.0 smp17a br 18.9 20.9 1.0 17 1.0 14.5 27.6 smp18a bt 20.0 22.1 1.0 18 1.0 13.7 29.2 smp20a bv 22.2 24.5 1.0 20 1.0 12.3 32.4 smp22a bx 24.4 26.9 1.0 22 1.0 11.3 35.5 smp24a bz 26.7 29.5 1.0 24 1.0 10.3 38.9 smp26a ce 28.9 31.9 1.0 26 1.0 9.5 42.1 smp28a cg 31.1 34.4 1.0 28 1.0 8.8 45.4 smp30a ck 33.3 36.8 1.0 30 1.0 8.3 48.4 smp33a cm 36.7 40.6 1.0 33 1.0 7.5 53.3 smp36a cp 40.0 44.2 1.0 36 1.0 6.9 58.1 thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit typical thermal resistance, junction to lead (1) r ? jl 50 c/w typical thermal resistance , junction to ambient (2) r ? ja 250 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode smp3v3-m3/84a 0.024 84a 3000 7" diameter plastic tape and reel smp3v3-m3/85a 0.024 85a 10 000 13" diameter plastic tape and reel smp11a-m3/84a 0.024 84a 3000 7" diameter plastic tape and reel smp11a-m3/85a 0.024 85a 10 000 13" diameter plastic tape and reel
smp3v3 thru smp36a www.vishay.com vishay general semiconductor revision: 11-dec-12 3 document number: 88481 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - peak pulse power rating curve fig. 2 - pulse derating curve fig. 3 - pulse waveform fig. 4 - typical junction capacitance fig. 5 - typical tran sient thermal impedance n on-repetitive p u lse waveform shown in fig. 3 t a = 25 c t d - p u lse width (s) 10 0.1 0.1 100 10 000 p ppm - peak p u lse power (kw) 1 1000 10 1 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas t j - initial temperat u re (c) 100 0 0 150 200 peak p u lse power (p pp ) of c u rrent (i pp ) derating in percentage (%) 25 175 50 50 75 25 125 100 75 t - time (ms) 150 0 04.0 i ppm - peak p u lse c u rrent, % i rsm 1.0 2.0 100 50 3.0 t d t r = 10 s half v al u e - i ppm i pp 2 10/1000 s waveform as defined by r.e.a. t j = 25 c p u lse width (t d ) is defined as the point where the peak c u rrent decays to 50 % of i ppm peak v al u e i ppm meas u red at zero bias meas u red at stand-off v oltage, v wm v wm - reverse stand-off v oltage ( v ) 10 000 10 1100 c j - j u nction capacitance (pf) 10 1000 100 t j = 25 c f = 1.0 mhz v sig = 50 m v p-p t - p u lse d u ration (s) 1000 0.1 0.001 1000 transient thermal impedance (c/w) 1 10 1 100 0.1 0.01 100 10
smp3v3 thru smp36a www.vishay.com vishay general semiconductor revision: 11-dec-12 4 document number: 88481 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package outline dimensions in inches (millimeters) 0.000 (0.00) 0.012 (0.30) 0.013 (0.35) 0.004 (0.10) 0.01 8 (0.45) 0.006 (0.15) 0.045 (1.15) 0.033 (0. 8 5) 0.036 (0.91) 0.024 (0.61) 0.016 (0.40) 0.032 (0. 8 0) 0.053 (1.35) 0.041 (1.05) 0.012 (0.30) ref. 0.105 (2.67) 0.025 (0.635) 0.100 (2.54) 0.030 (0.762) 0.050 (1.27) cathode band 0.142 (3.61) 0.126 (3.19) 0.15 8 (4.00) 0.146 (3.70) 0.0 8 6 (2.1 8 ) 0.074 (1. 88 ) 0.0 8 7 (2.20) 0.103 (2.60) do-220aa (smp)
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